NTE2332 Darlington Silicon NPN Transistor w/ Internal Damper & Zener Diode
Description: The NTE2332 Darlington transistor is especially well suited for use in switching of L load motor drivers, printer hammer drivers, relay drivers, etc. Features: D High DC Current Gain D Large Current Capacity and Wide ASO D Contains 60 10V Avalanche Diode Between Collector and Base D Uniformity in Collector-to-Base Breakdown Voltage Due to Adoption of Accurate Impurity Diffusion Process D 25mJ Reverse Energy Rating Absolute Maximum Ratings: (TA = +25C, unless otherwise specified) Collector to Base Voltage, VCBO, . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 10V Collector to Emitter Voltage, VCEO, . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 10V Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Collector Current, icp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4A Collector Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C, unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICEO IEBO Test Conditions VCB = 40V, IE = 0 VEB = 5V, IC = 0 Min - - Typ - - Max 10 2 Unit A mA
Electrical Characteristics (Cont'd): (TA = +25C, unless otherwise specified) Parameter DC Current Gain Gain Bandwidth Product Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Base Breakdown Voltage Symbol hFE fT VCE(sat) VBE(sat) Test Conditions VCE = 5V, IC = 1A VCE = 5V, IC = 1A IC = 1A, IB = 4mA IC = 1A, IB = 4mA Min Typ Max - - 1.5 2.0 70 70 - - - - MHZ V V V V mJ s s s Unit
1000 4000 - - - 50 50 25 - - - 180 1.0 - 60 60 - 0.2 3.5 0.5
V(BR)CBO IC = 0.1mA, IE = 0
Collector-Emitter Breakdown V(BR)CEO IC = 1mA, RBE = Voltage Unclamped Inductive Load Energy Turn-On Time Storage Time Fall Time Es/b ton tstg tf L = 100mH, RBE = 100 VCC = 20V, IC = 1A IB1 = -IB2 = 4mA IB1 = -IB2 = 4mA
.420 (10.67) Max .110 (2.79) C B .147 (3.75) Dia Max .500 (12.7) Max
E .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab
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